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MRF7S18125BHSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
HV7 1.9GHZ CW 125W NI780S

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  • 参数
  • 描述
  • 文档
参数 数值
Package Thickness (nominal) (mm) 3.760
Power Gain (Typ) (dB) @ f (MHz) 16.5 @ 1990
Device Sample Availability 13 Jun 2011
Frequency (Max) (MHz) 1990
Last Ship Date 27 Jun 2013
RoHS Certificate of Analysis (CoA) Contact Us
Tape & Reel Yes
Application GSM / GSM EDGE
Part Number MRF7S18125BHSR3
Status End of Life
Device Production Availability 13 Jun 2011
Frequency Band (Min-Max) (MHz) 1930 to 1990
MPQ Container REEL
Number of Reflow Cycles 3
Package Length (nominal) (mm) 20.570
Peak Package Body Temperature (PPT)(°C) 260
Sample Exception Availability N
Thermal Resistance (Spec) (°CW) 0.31
Die Technology LDMOS
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Maximum Time at Peak Temperature (s) 40
Test Signal 1-Tone
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Budgetary Price($US) -
Harmonized Tariff (US) Disclaimer 8541.29.0075
Minimum Package Quantity (MPQ) 250
REACH SVHC Freescale REACH Statement
Efficiency (Typ) (%) 55
Life Cycle Description (code) PROD PHASE OUT/SEE LAST ORD DT
Matching I/O
Supply Voltage (Typ) (V) 28
2nd Level Interconnect e4
Material Type Tested Packaged Device
Class AB
Export Control Classification Number (US) EAR99
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 125 @ CW
P1dB (Typ) (W) 140
Package Width (nominal) (mm) 9.780
POQ Container BOX
Micron Size (μm) 6
Package Description and Mechanical Drawing NI-780S
Preferred Order Quantity (POQ) 250
Description HV7 1.9GHZ CW 125W NI780S
Device Weight (g) 4.76300
Last Order Date 27 Jun 2012
Leadtime (weeks) 8
Halogen Free Yes
Pin/Lead/Ball Count 3

The MRF7S18125BHR3 and MRF7S18125BHSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. View Product Image

Features

  • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 1100 mA, Pout = 125 Watts CW, f = 1930 MHz
    Power Gain = 16.5 dB
    Drain Efficiency = 55%
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 1100 mA, Pout = 57 Watts Avg., Full Frequency Band (1930–1990 MHz).
    Power Gain = 17 dB
    Drain Efficiency = 39%
    Spectral Regrowth @ 400 kHz Offset = –60 dBc
    Spectral Regrowth @ 600 kHz Offset = –74 dBc
    EVM = 2.6% rms
  • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 125 Watts CW Output Power
  • Typical Pout @ 1 dB Compression Point 140 Watts CW
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Engineering Bulletins
文档名称 文档类型 软件 描述
MRF7S18125BHSR3PDF下载 点击下载 点击下载 EB212
Data Sheets
文档名称 文档类型 软件 描述
MRF7S18125BHSR3PDF下载 点击下载 点击下载 MRF7S18125BH
Selector Guides
文档名称 文档类型 软件 描述
MRF7S18125BHSR3PDF下载 点击下载 点击下载 SG46
Application Notes
文档名称 文档类型 软件 描述
MRF7S18125BHSR3PDF下载 点击下载 点击下载 AN1955
Packaging Information
文档名称 文档类型 软件 描述
MRF7S18125BHSR3PDF下载 点击下载 点击下载 98ASB15607C
MRF7S18125BHSR3PDF下载 点击下载 点击下载 98ASB16718C