The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi–stage structure. Its wideband On-Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N–CDMA and W–CDMA. View Product Image
Features
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Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, Pout = 15 Watts CW, Full Frequency Band (860–960 MHz)
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Power Gain = 30 dB
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Power Added Efficiency = 44%
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Typical GSM/GSM EDGE Performances: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, Pout = 3 Watts Avg., Full Frequency Band (869–894 MHz and 921–960 MHz)
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Power Gain = 31 dB
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Power Added Efficiency = 19%
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Spectral Regrowth @ 400 kHz Offset = –65 dBc
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Spectral Regrowth @ 600 kHz Offset = –83 dBc
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EVM = 1.5%
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Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW Output Power
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Characterized with Series Equivalent Large–Signal Impedance Parameters
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On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
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Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
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On-Chip Current Mirror gm Reference FET for Self Biasing Application
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Integrated ESD Protection
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200°C Capable Plastic Package
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N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
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In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.