ACQ08E SDSXD-128G-000000
我的供应链 询价历史 我的订单
全部商品分类
产品分类 > 电感器 > 积层式贴片磁珠 > GBK321611T-201Y-N

可能感兴趣的商品

最近浏览过的商品

  • 1
    AQV414EAX

    厂商：

    类别：PhotoMOS(MOSFET输出光电耦合器)

  • 1
    AQV414EA

    厂商：

    类别：PhotoMOS(MOSFET输出光电耦合器)

  • 1
    AT45DB161E-MHD-Y

    厂商：Atmel

    类别：串行闪存

  • 1
    AXT640224

    厂商：Panasonic

    类别：板到板窄间距连接器

  • 1
    AXT642124

    厂商：Panasonic

    类别：板到板窄间距连接器

pic

GBK321611T-201Y-N

厂商：
类别：
积层式贴片磁珠
包装：
2015+
封装：
SMD
无铅情况/ROHS：
-
描述：
QQ943556160/1793674054

我要询价我要收藏

  • 参数
  • 描述
参数 数值

The MHVIC915NR2 wideband integrated circuit is designed with on-chip matching that makes it usable from 750 to 1000 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats. View Product Image

Features

  • Typical Single–Carrier N–CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band (746 to 960 MHz), IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
    Power Gain: 31 dB
    Power Added Efficiency: 21%
    ACPR @ 750 kHz Offset:  –50 dBc in 30 kHz Bandwidth
  • Typical Single–Carrier N–CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 23 dBm, Full Frequency Band (869–894 MHz), IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF
    Power Gain:  31 dB
    Power Added Efficiency:  21%
    ACPR @ 750 kHz Offset:  –60 dBc in 30 kHz Bandwidth
    ACPR @ 1.98 MHz Offset:  –66 dBc in 30 kHz Bandwidth
  • Typical GSM Performance: VDD = 26 Volts, Pout = 15 W P1dB, Full Frequency Band (921–960 MHz)
    Power Gain:  30 dB @ P1dB
    Power Added Efficiency = 56% @ P1dB
  • Capable of Handling 3:1 VSWR, @ 27 Vdc, 880 MHz, 15 Watts CW Output Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • On-Chip Matching (50 Ohm Input, DC Blocked, >9 Ohm Output)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • On-Chip Current Mirror gm Reference FET for Self Biasing Application
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

请选择文档类型：
Copyright©2017 solecsy.com. All Rights Reserved    粤ICP备07509311号   软件企业认定证书 国家级高新技术企业称号 本站由速网科技提供CDN加速
版权所有：深圳市搜了网络科技股份有限公司