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W9864G6IH

厂商：
Winbond
类别：
利基动态随机存取内存
包装：
-
封装：
Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
无铅情况/ROHS：
无铅
描述：
The W9864G6IH is a 64M SDRAM and ...

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  • 参数
  • 描述
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参数 数值
Speed Grade CL3//-5/200 MHz
Speed Grade CL3//-6/-6I/-6A/166 MHz
Speed Grade CL3//-7/-7S/143 MHz
Voltage 3.3V±0.3V
Voltage 2.7V~3.6V
Voltage 3.3V±0.3V
Status NRFND
Status NRFND
RoHS Y
RoHS Y
Package Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
Package Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
Organization 4Mbit x16
Organization 4Mbit x16/4 Banks
Speed -5_200MHz_CL3

Description
The W9864G6IH is a 64M SDRAM and speed involving -5/-6/-6I/-6A/-7/-7S Status: Not recommended for new design.
Features
3.3V± 0.3V for -5/-6/-6I/-6A grade power supply
2.7V~3.6V for -7/-7S grade power supply
1,048,576 words x 4 banks x 16 bits organization
Self Refresh Current: Standard and Low Power
CAS Latency: 2 & 3
Burst Length: 1, 2, 4, 8 and full page
Sequential and Interleave Burst
Byte data controlled by LDQM, UDQM
Auto-precharge and controlled precharge
Burst read, single write operation
4K refresh cycles/64 mS
Interface: LVTTL

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