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W9464G6JH

厂商:
Winbond
类别:
利基动态随机存取内存
包装:
-
封装:
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
无铅情况/ROHS:
无铅
描述:
W9464G6JH is a 64M DDR SDRAM and ...

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参数 数值
Speed Grade CL3//-5/-5I/200 MHz
Speed Grade CL3/CL4//-4/250 MHz
Voltage 2.4V~2.7V
Voltage 2.5V±0.2V
Status P
RoHS Y
Package Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
Organization 4Mbitx16/4 Banks

Description
W9464G6JH is a 64M DDR SDRAM and speed involving -4 / -5 and -5I Status: Mass Production
Features
2.5V ±0.2V Power Supply for DDR400
2.4V~2.7V Power Supply for DDR500
Up to 250 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and /CLK)
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5, 3 and 4
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
15.6μS refresh interval (4K/64 mS Refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2

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