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W9425G8EH

厂商:
Winbond
类别:
利基动态随机存取内存
包装:
-
封装:
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
无铅情况/ROHS:
无铅
描述:
The W9425G8EH is a 256M DDR SDRAM...

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参数 数值
Speed Grade CL3//-5/200 MHz
Voltage 2.5V±0.2V
Voltage 2.5V±0.2V
Status EOL
Status EOL
RoHS Y
RoHS Y
Package Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
Package Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
Organization 32Mbitx8
Organization 32Mbitx8/4 Banks
Speed -5_200MHz_CL3

Description
The W9425G8EH is a 256M DDR SDRAM and speed involving -5/-6/-75 Status: End of life
Features
2.5V ±0.2V Power Supply for DDR266/333/400
Up to 200 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and /CLK)
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5 and 3
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
7.8μS refresh interval (8K/64 mS refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2

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