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W9412G6JB

厂商:
Winbond
类别:
利基动态随机存取内存
包装:
-
封装:
Packaged in 60 Ball(8x13mm2)TFBGA, using Lead free materials with RoHS compliant
无铅情况/ROHS:
无铅
描述:
The W9412G6JB is a 128M DDR SDRAM...

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  • 参数
  • 描述
参数 数值
Voltage 2.5V±0.2V
Package Packaged in 60 Ball(8x13mm2)TFBGA, using Lead free materials with RoHS compliant
Status P
Organization 8Mbitx16/4 Banks
RoHS Y
Speed Grade CL3//-5/200 MHz

Description
The W9412G6JB is a 128M DDR SDRAM and speed involving -4 and -5/-5I Status: Not recommended for new design.
Features
2.5V ±0.2V Power Supply for DDR400
2.5V ~ 2.7V Power Supply for DDR500
Up to 250 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and /CLK)
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5, 3 and 4
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
15.6μS refresh interval (4K/64 mS Refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2

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