The MWE6IC9080NR1, MWE6IC9080GNR1 and MWE6IC9080NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 865 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. View Product Image
Features
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Typical GSM Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 80 Watts CW
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Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 128 Watts CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
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Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 80 Watts CW Pout
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Typical Pout @ 1 dB Compression Point ≃ 90 Watts CW
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Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 35 Watts Avg.
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Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters
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On-Chip Matching (50 Ohm Input, DC Blocked)
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Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
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Integrated ESD Protection
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225°C Capable Plastic Package
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RoHS Compliant
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In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.