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MRFE6S9200HR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-880
无铅情况/ROHS:
无铅
描述:
HV6E 900MHZ 200W NI880H

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) EAR99
Frequency (Max) (MHz) 960
Frequency Band (Min-Max) (MHz) 880 to 960
Harmonized Tariff (US) Disclaimer 8541.29.0075
Life Cycle Description (code) PRODUCT LAST SHIPMENTS
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) 6
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability N
Supply Voltage (Typ) (V) 28
Minimum Package Quantity (MPQ) 250
POQ Container BOX
Matching Input
P1dB (Typ) (W) 200
Test Signal W-CDMA
Last Order Date 27 Jun 2012
Last Ship Date 27 Jun 2013
Halogen Free Yes
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
MPQ Container REEL
Number of Reflow Cycles 3
REACH SVHC Freescale REACH Statement
Description HV6E 900MHZ 200W NI880H
Package Width (nominal) (mm) .540
Preferred Order Quantity (POQ) 250
Thermal Resistance (Spec) (°CW) 0.33
Budgetary Price($US) -
Status No Longer Manufactured
Tape & Reel Yes
Part Number MRFE6S9200HR3
Device Weight (g) 9.73370
Peak Package Body Temperature (PPT)(°C) 260
Package Length (nominal) (mm) 1.340
Package Thickness (nominal) (mm) .200
Package Description and Mechanical Drawing NI-880
Efficiency (Typ) (%) 35
Power Gain (Typ) (dB) @ f (MHz) 21 @ 880
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 58 @ AVG
Device Sample Availability 15 Jun 2010
Device Sample Availability 13 Jun 2011
Device Production Availability 15 Jun 2010
Device Production Availability 13 Jun 2011

The MRFE6S9200HR3 and MRFE6S9200HSR3 are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 28 volt base station equipment. View Product Image

Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., f = 880 MHz, 3GPP Test Model 1, 64 DPCH with 45.2% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 21 dB
    Drain Efficiency: 35%
    Device Output Signal PAR: 6.36 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –40 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 300 W CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness.
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Application Notes
文档名称 文档类型 软件 描述
MRFE6S9200HR3PDF下载 点击下载 点击下载 AN1955
Selector Guides
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MRFE6S9200HR3PDF下载 点击下载 点击下载 SG46
Engineering Bulletins
文档名称 文档类型 软件 描述
MRFE6S9200HR3PDF下载 点击下载 点击下载 EB212
Packaging Information
文档名称 文档类型 软件 描述
MRFE6S9200HR3PDF下载 点击下载 点击下载 98ARB18660C
MRFE6S9200HR3PDF下载 点击下载 点击下载 98ARB18493C
Data Sheets
文档名称 文档类型 软件 描述
MRFE6S9200HR3PDF下载 点击下载 点击下载 MRFE6S9200H