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MRF8S9120NR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
OM780-2 Cu Plastic
无铅情况/ROHS:
无铅
描述:
HV8 900MHZ 120W OM780-2

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e3
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) EAR99
Frequency (Max) (MHz) 960
Frequency Band (Min-Max) (MHz) 865 to 960
Harmonized Tariff (US) Disclaimer 8541.29.0075
Life Cycle Description (code) PRODUCT RAPID GROWTH
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) .35
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability Y
Supply Voltage (Typ) (V) 28
Minimum Package Quantity (MPQ) 250
POQ Container REEL
Floor Life 168 HOURS
Matching I/O
Moisture Sensitivity Level (MSL) 3
P1dB (Typ) (W) 120
Test Signal W-CDMA
Leadtime (weeks) 8
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
MPQ Container REEL
Number of Reflow Cycles 3
REACH SVHC Freescale REACH Statement
UL94 (plastics flammability test) V0: burning stops within 10 seconds on a vertical specimen; no drips allowed
Description HV8 900MHZ 120W OM780-2
Package Width (nominal) (mm) 9.960
Preferred Order Quantity (POQ) 250
Thermal Resistance (Spec) (°CW) 0.62
Budgetary Price($US) -
Status Active
Tape & Reel Yes
Part Number MRF8S9120NR3
Device Weight (g) 3.08110
Peak Package Body Temperature (PPT)(°C) 260
Package Length (nominal) (mm) 20.570
Package Thickness (nominal) (mm) 3.810
Package Description and Mechanical Drawing OM780-2 Cu Plastic
Efficiency (Typ) (%) 34.2
Power Gain (Typ) (dB) @ f (MHz) 19.8 @ 960
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 33 @ AVG

The MRF8S9120NR3 is designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 120 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point 120 Watts CW
  • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

Application Notes
文档名称 文档类型 软件 描述
MRF8S9120NR3PDF下载 点击下载 点击下载 AN1955
MRF8S9120NR3PDF下载 点击下载 点击下载 AN1907
MRF8S9120NR3PDF下载 点击下载 点击下载 AN3789
Data Sheets
文档名称 文档类型 软件 描述
MRF8S9120NR3PDF下载 点击下载 点击下载 MRF8S9120N
Packaging Information
文档名称 文档类型 软件 描述
MRF8S9120NR3PDF下载 点击下载 点击下载 98ASA10831D
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8S9120NR3PDF下载 点击下载 点击下载 EB212
Selector Guides
文档名称 文档类型 软件 描述
MRF8S9120NR3PDF下载 点击下载 点击下载 SG46