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MRF8S9100HSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
HV8 900MHZ 100W NI780HS

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) 5A991
Frequency (Max) (MHz) 960
Frequency Band (Min-Max) (MHz) 920 to 960
Harmonized Tariff (US) Disclaimer 8541.29.0075
Life Cycle Description (code) PRODUCT STABLE GROWTH/MATURITY
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) .35
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability Y
Supply Voltage (Typ) (V) 28
Minimum Package Quantity (MPQ) 250
POQ Container REEL
Matching Input
P1dB (Typ) (W) 108
Test Signal 1-Tone
Leadtime (weeks) 8
Halogen Free Yes
Material Type Tested Packaged Device
MPQ Container REEL
REACH SVHC Freescale REACH Statement
Description HV8 900MHZ 100W NI780HS
Package Width (nominal) (mm) 9.780
Preferred Order Quantity (POQ) 250
Thermal Resistance (Spec) (°CW) 0.65
Budgetary Price($US) -
Status Active
Tape & Reel Yes
Part Number MRF8S9100HSR3
Device Weight (g) 4.74270
Package Length (nominal) (mm) 20.570
Package Thickness (nominal) (mm) 3.760
Package Description and Mechanical Drawing NI-780S
Efficiency (Typ) (%) 51.6
Power Gain (Typ) (dB) @ f (MHz) 19.3 @ 920
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 72 @ CW
Device Sample Availability 25 Mar 2011
Device Production Availability 25 Mar 2011

The MRF8S9100HR3 and MRF8S9100HSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 108 Watts CW
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 45 Watts Avg.
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.




Packaging Information
文档名称 文档类型 软件 描述
MRF8S9100HSR3PDF下载 点击下载 点击下载 98ASB15607C
MRF8S9100HSR3PDF下载 点击下载 点击下载 98ASB16718C
Data Sheets
文档名称 文档类型 软件 描述
MRF8S9100HSR3PDF下载 点击下载 点击下载 MRF8S9100H
Application Notes
文档名称 文档类型 软件 描述
MRF8S9100HSR3PDF下载 点击下载 点击下载 AN1955
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8S9100HSR3PDF下载 点击下载 点击下载 EB212
Selector Guides
文档名称 文档类型 软件 描述
MRF8S9100HSR3PDF下载 点击下载 点击下载 SG46