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MRF8S23120HR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780
无铅情况/ROHS:
无铅
描述:
HV8 2.3GHZ 120W NI780H

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) EAR99
Frequency (Max) (MHz) 2400
Frequency Band (Min-Max) (MHz) 2300 to 2400
Harmonized Tariff (US) Disclaimer 8541.29.0075
Life Cycle Description (code) PRODUCT RAPID GROWTH
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) 6
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability Y
Supply Voltage (Typ) (V) 28
Minimum Package Quantity (MPQ) 250
POQ Container REEL
Matching I/O
P1dB (Typ) (W) 107
Test Signal W-CDMA
Leadtime (weeks) 8
Halogen Free Yes
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
MPQ Container REEL
Number of Reflow Cycles 3
REACH SVHC Freescale REACH Statement
Description HV8 2.3GHZ 120W NI780H
Package Width (nominal) (mm) 9.780
Preferred Order Quantity (POQ) 250
Application LTE
Thermal Resistance (Spec) (°CW) 0.5
Budgetary Price($US) -
Status Active
Tape & Reel Yes
Part Number MRF8S23120HR3
Device Weight (g) 6.42500
Peak Package Body Temperature (PPT)(°C) 260
Package Length (nominal) (mm) 34.040
Package Thickness (nominal) (mm) 3.760
Package Description and Mechanical Drawing NI-780
Efficiency (Typ) (%) 31.9
Power Gain (Typ) (dB) @ f (MHz) 16 @ 2300
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 28 @ AVG

The MRF8S23120HR3 and MRF8S23120HSR3 are designed for LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 5:1 VSWR, @ 30 Vdc, 2350 MHz, 138 Watts CW Output Power (2 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 107 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

Packaging Information
文档名称 文档类型 软件 描述
MRF8S23120HR3PDF下载 点击下载 点击下载 98ASB16718C
MRF8S23120HR3PDF下载 点击下载 点击下载 98ASB15607C
Selector Guides
文档名称 文档类型 软件 描述
MRF8S23120HR3PDF下载 点击下载 点击下载 SG46
Data Sheets
文档名称 文档类型 软件 描述
MRF8S23120HR3PDF下载 点击下载 点击下载 MRF8S23120H
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8S23120HR3PDF下载 点击下载 点击下载 EB212
Application Notes
文档名称 文档类型 软件 描述
MRF8S23120HR3PDF下载 点击下载 点击下载 AN1955