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MRF8S21140HSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
HV8 2GHZ 140W NI780S

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) 5A991
Frequency (Max) (MHz) 2170
Frequency Band (Min-Max) (MHz) 2110 to 2170
Harmonized Tariff (US) Disclaimer 8541.29.0075
Life Cycle Description (code) PRODUCT RAPID GROWTH
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) 6
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability Y
Supply Voltage (Typ) (V) 28
Minimum Package Quantity (MPQ) 250
POQ Container REEL
Matching I/O
P1dB (Typ) (W) 126
Test Signal W-CDMA
Wideband Efficiency (Typ) (%) 31.7
Wideband Frequency (Min-Max) (MHz) (f) 1850 to 2300
Halogen Free Yes
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
MPQ Container REEL
Number of Reflow Cycles 3
REACH SVHC Freescale REACH Statement
Description HV8 2GHZ 140W NI780S
Package Width (nominal) (mm) 9.780
Preferred Order Quantity (POQ) 250
Application LTE / W-CDMA
Thermal Resistance (Spec) (°CW) 0.47
Budgetary Price($US) -
Status Active
Tape & Reel Yes
Part Number MRF8S21140HSR3
Device Weight (g) 4.76300
Peak Package Body Temperature (PPT)(°C) 260
Package Length (nominal) (mm) 20.570
Package Thickness (nominal) (mm) 3.760
Package Description and Mechanical Drawing NI-780S
Efficiency (Typ) (%) 31.7
Power Gain (Typ) (dB) @ f (MHz) 17.9 @ 2140
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 34 @ AVG
Device Sample Availability 13 Jun 2011
Device Production Availability 13 Jun 2011

The MRF8S21140HR3 and MRF8S21140HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 970 mA, Pout = 34 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 188 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 126 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Selector Guides
文档名称 文档类型 软件 描述
MRF8S21140HSR3PDF下载 点击下载 点击下载 SG46
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8S21140HSR3PDF下载 点击下载 点击下载 EB212
Packaging Information
文档名称 文档类型 软件 描述
MRF8S21140HSR3PDF下载 点击下载 点击下载 98ASB15607C
MRF8S21140HSR3PDF下载 点击下载 点击下载 98ASB16718C
Application Notes
文档名称 文档类型 软件 描述
MRF8S21140HSR3PDF下载 点击下载 点击下载 AN1955
Data Sheets
文档名称 文档类型 软件 描述
MRF8S21140HSR3PDF下载 点击下载 点击下载 MRF8S21140H