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MRF8S18120HR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780
无铅情况/ROHS:
无铅
描述:
HV8 1.8GHZ 120W NI780H

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) 5A991
Frequency (Max) (MHz) 1880
Frequency Band (Min-Max) (MHz) 1805 to 1880
Harmonized Tariff (US) Disclaimer 8541.29.0075
Life Cycle Description (code) PRODUCT STABLE GROWTH/MATURITY
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) 6
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability Y
Supply Voltage (Typ) (V) 28
Minimum Package Quantity (MPQ) 250
POQ Container REEL
Matching I/O
P1dB (Typ) (W) 120
Test Signal 1-Tone
Leadtime (weeks) 8
Halogen Free Yes
Material Type Tested Packaged Device
MPQ Container REEL
REACH SVHC Freescale REACH Statement
Description HV8 1.8GHZ 120W NI780H
Package Width (nominal) (mm) 9.780
Preferred Order Quantity (POQ) 250
Thermal Resistance (Spec) (°CW) 0.47
Budgetary Price($US) -
Status Active
Tape & Reel Yes
Part Number MRF8S18120HR3
Device Weight (g) 6.42500
Package Length (nominal) (mm) 34.040
Package Thickness (nominal) (mm) 3.760
Package Description and Mechanical Drawing NI-780
Efficiency (Typ) (%) 49.8
Power Gain (Typ) (dB) @ f (MHz) 18.2 @ 1805
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 72 @ CW
Device Sample Availability 15 Jun 2010
Device Production Availability 15 Jun 2010

The MRF8S18120HR3 and MRF8S18120HSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW
  • Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 120 Watts CW
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 46 Watts Avg.
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Application Notes
文档名称 文档类型 软件 描述
MRF8S18120HR3PDF下载 点击下载 点击下载 AN1955
Packaging Information
文档名称 文档类型 软件 描述
MRF8S18120HR3PDF下载 点击下载 点击下载 98ASB16718C
MRF8S18120HR3PDF下载 点击下载 点击下载 98ASB15607C
Selector Guides
文档名称 文档类型 软件 描述
MRF8S18120HR3PDF下载 点击下载 点击下载 SG46
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8S18120HR3PDF下载 点击下载 点击下载 EB212
Data Sheets
文档名称 文档类型 软件 描述
MRF8S18120HR3PDF下载 点击下载 点击下载 MRF8S18120H