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MRF8P20100HSR5

厂商：
Freescale
类别：
RF功率晶体管
包装：
-
封装：
NI-780HS-4
无铅情况/ROHS：
无铅
描述：
HV8 2GHZ 100W NI780HS-4

我要询价我要收藏

  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) EAR99
Frequency (Max) (MHz) 2025
Frequency Band (Min-Max) (MHz) 1805 to 2025
Harmonized Tariff (US) Disclaimer 8541.29.0075
Life Cycle Description (code) PRODUCT STABLE GROWTH/MATURITY
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) 6
Pin/Lead/Ball Count 5
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability N
Supply Voltage (Typ) (V) 28
Minimum Package Quantity (MPQ) 50
POQ Container REEL
Matching I/O
P1dB (Typ) (W) 78
Test Signal W-CDMA
Leadtime (weeks) 8
Halogen Free Yes
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
MPQ Container REEL
Number of Reflow Cycles 3
REACH SVHC Freescale REACH Statement
Description HV8 2GHZ 100W NI780HS-4
Package Width (nominal) (mm) 9.780
Preferred Order Quantity (POQ) 50
Thermal Resistance (Spec) (°CW) 0.88
Budgetary Price($US) -
Status Active
Tape & Reel Yes
Part Number MRF8P20100HSR5
Device Weight (g) 6.46880
Peak Package Body Temperature (PPT)(°C) 260
Package Length (nominal) (mm) 20.570
Package Thickness (nominal) (mm) 3.730
Package Description and Mechanical Drawing NI-780HS-4
Efficiency (Typ) (%) 44.3
Power Gain (Typ) (dB) @ f (MHz) 16 @ 2025
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 20 @ AVG

The MRF8P20100HR3 and MRF8P20100HSR3 are designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
  • Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQA = IDQB = 330 mA, Pout = 42 Watts Avg.
  • Production Tested in a Symmetrical Doherty Configuration
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

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Packaging Information
文档名称 文档类型 软件 描述
MRF8P20100HSR5PDF下载 点击下载 点击下载 98ASA10793D
MRF8P20100HSR5PDF下载 点击下载 点击下载 98ASA10718D
Selector Guides
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MRF8P20100HSR5PDF下载 点击下载 点击下载 SG46
Data Sheets
文档名称 文档类型 软件 描述
MRF8P20100HSR5PDF下载 点击下载 点击下载 MRF8P20100H
Application Notes
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MRF8P20100HSR5PDF下载 点击下载 点击下载 AN1955
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8P20100HSR5PDF下载 点击下载 点击下载 EB212
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