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MRF7S21150HSR3

厂商：
Freescale
类别：
RF功率晶体管
包装：
-
封装：
NI-780S
无铅情况/ROHS：
无铅
描述：
HV7 2.1GHZ 150W NI780HS

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) EAR99
Frequency (Max) (MHz) 2170
Frequency Band (Min-Max) (MHz) 2110 to 2170
Harmonized Tariff (US) Disclaimer 8541.29.0075
Life Cycle Description (code) PRODUCT STABLE GROWTH/MATURITY
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) 6
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability Y
Supply Voltage (Typ) (V) 28
Minimum Package Quantity (MPQ) 250
POQ Container BOX
Matching I/O
P1dB (Typ) (W) 150
Test Signal W-CDMA
Leadtime (weeks) 8
Halogen Free Yes
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
MPQ Container REEL
Number of Reflow Cycles 3
REACH SVHC Freescale REACH Statement
Description HV7 2.1GHZ 150W NI780HS
Package Width (nominal) (mm) 9.780
Preferred Order Quantity (POQ) 250
Thermal Resistance (Spec) (°CW) 0.37
Budgetary Price($US) -
Status Active
Tape & Reel Yes
Part Number MRF7S21150HSR3
Device Weight (g) 4.76300
Peak Package Body Temperature (PPT)(°C) 260
Package Length (nominal) (mm) 20.570
Package Thickness (nominal) (mm) 3.760
Package Description and Mechanical Drawing NI-780S
Efficiency (Typ) (%) 31
Power Gain (Typ) (dB) @ f (MHz) 17.5 @ 2170
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 44 @ AVG

The MRF7S21150HR3 and MRF7S21150HSR3 are designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications. View Product Image

Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1350 mA, Pout = 44 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 17.5 dB
    Drain Efficiency: 31%
    Device Output Signal PAR:  6.1 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 150 Watts CW Peak Tuned Output Power
  • Pout @ 1 dB Compression Point ≥ 150 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

请选择文档类型：
Data Sheets
文档名称 文档类型 软件 描述
MRF7S21150HSR3PDF下载 点击下载 点击下载 MRF7S21150H
Packaging Information
文档名称 文档类型 软件 描述
MRF7S21150HSR3PDF下载 点击下载 点击下载 98ASB16718C
MRF7S21150HSR3PDF下载 点击下载 点击下载 98ASB15607C
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF7S21150HSR3PDF下载 点击下载 点击下载 EB212
Selector Guides
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MRF7S21150HSR3PDF下载 点击下载 点击下载 SG46
Application Notes
文档名称 文档类型 软件 描述
MRF7S21150HSR3PDF下载 点击下载 点击下载 AN1955
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