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MRF7S19170HSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-880S
无铅情况/ROHS:
无铅
描述:
HV7 1.9GHZ 50W NI880HS

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) EAR99
Frequency (Max) (MHz) 1990
Frequency Band (Min-Max) (MHz) 1930 to 1990
Harmonized Tariff (US) Disclaimer 8541.29.0075
Life Cycle Description (code) PRODUCT MATURITY/SATURATION
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) 6
Pin/Lead/Ball Count 2
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability Y
Supply Voltage (Typ) (V) 28
Minimum Package Quantity (MPQ) 250
POQ Container BOX
Matching I/O
P1dB (Typ) (W) 170
Test Signal W-CDMA
Leadtime (weeks) 8
Halogen Free Yes
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
MPQ Container REEL
Number of Reflow Cycles 3
REACH SVHC Freescale REACH Statement
Description HV7 1.9GHZ 50W NI880HS
Package Width (nominal) (mm) .540
Preferred Order Quantity (POQ) 250
Thermal Resistance (Spec) (°CW) 0.31
Budgetary Price($US) -
Status Active
Tape & Reel Yes
Part Number MRF7S19170HSR3
Device Weight (g) 6.75760
Peak Package Body Temperature (PPT)(°C) 260
Package Length (nominal) (mm) .900
Package Thickness (nominal) (mm) .200
Package Description and Mechanical Drawing NI-880S
Efficiency (Typ) (%) 32
Power Gain (Typ) (dB) @ f (MHz) 17.2 @ 1990
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 50 @ AVG
Device Sample Availability 15 Jun 2010
Device Production Availability 15 Jun 2010

The MRF7S19170HR3 and MRF7S19170HSR3 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. View Product Image

Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 17.2 dB
    Drain Efficiency: 32%
    Device Output Signal PAR:  6.2 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –37.5 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 170 Watts CW Output Power
  • Pout @ 1 dB Compression Point ≥ 170 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Engineering Bulletins
文档名称 文档类型 软件 描述
MRF7S19170HSR3PDF下载 点击下载 点击下载 EB212
Packaging Information
文档名称 文档类型 软件 描述
MRF7S19170HSR3PDF下载 点击下载 点击下载 98ARB18493C
MRF7S19170HSR3PDF下载 点击下载 点击下载 98ARB18660C
Data Sheets
文档名称 文档类型 软件 描述
MRF7S19170HSR3PDF下载 点击下载 点击下载 MRF7S19170H
Selector Guides
文档名称 文档类型 软件 描述
MRF7S19170HSR3PDF下载 点击下载 点击下载 SG46
Application Notes
文档名称 文档类型 软件 描述
MRF7S19170HSR3PDF下载 点击下载 点击下载 AN1955