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MRF7S19080HSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
HV7 1.9GHZ 28V NI780HS

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  • 参数
  • 描述
  • 文档
参数 数值
Die Technology LDMOS
Description HV7 1.9GHZ 28V NI780HS
Device Weight (g) 4.76300
Efficiency (Typ) (%) 32
Leadtime (weeks) 8
Package Thickness (nominal) (mm) 3.760
POQ Container BOX
Peak Package Body Temperature (PPT)(°C) 260
Device Production Availability 13 Dec 2006
MPQ Container REEL
Sample Exception Availability Y
Thermal Resistance (Spec) (°CW) 0.69
Frequency Band (Min-Max) (MHz) 1930 to 1990
Material Type Tested Packaged Device
Number of Reflow Cycles 3
P1dB (Typ) (W) 80
Package Length (nominal) (mm) 20.570
Life Cycle Description (code) PRODUCT MATURITY/SATURATION
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Halogen Free Yes
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 24 @ AVG
Pin/Lead/Ball Count 3
Part Number MRF7S19080HSR3
Matching I/O
Budgetary Price($US) -
Harmonized Tariff (US) Disclaimer 8541.29.0075
Minimum Package Quantity (MPQ) 250
Package Description and Mechanical Drawing NI-780S
Power Gain (Typ) (dB) @ f (MHz) 18 @ 1990
REACH SVHC Freescale REACH Statement
Status Active
Maximum Time at Peak Temperature (s) 40
Tape & Reel Yes
Package Width (nominal) (mm) 9.780
Micron Size (μm) 6
2nd Level Interconnect e4
Device Sample Availability 13 Dec 2006
Preferred Order Quantity (POQ) 250
Test Signal W-CDMA
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Export Control Classification Number (US) EAR99
Frequency (Max) (MHz) 1990
RoHS Certificate of Analysis (CoA) Contact Us
Class AB
Supply Voltage (Typ) (V) 28

The MRF7S19080HR3 and MRF7S19080HSR3 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD-SCDMA and PCN-PCS/cellular radio applications. View Product Image

Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 24 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 18 dB
    Drain Efficiency: 32%
    Device Output Signal PAR:  6.2 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –38 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 80 Watts CW Output Power
  • Pout @ 1 dB Compression Point ≥ 80 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Engineering Bulletins
文档名称 文档类型 软件 描述
MRF7S19080HSR3PDF下载 点击下载 点击下载 EB212
Data Sheets
文档名称 文档类型 软件 描述
MRF7S19080HSR3PDF下载 点击下载 点击下载 MRF7S19080H
Selector Guides
文档名称 文档类型 软件 描述
MRF7S19080HSR3PDF下载 点击下载 点击下载 SG46
Application Notes
文档名称 文档类型 软件 描述
MRF7S19080HSR3PDF下载 点击下载 点击下载 AN1955
Packaging Information
文档名称 文档类型 软件 描述
MRF7S19080HSR3PDF下载 点击下载 点击下载 98ASB15607C
MRF7S19080HSR3PDF下载 点击下载 点击下载 98ASB16718C