| Die Technology |
LDMOS |
| Number of Reflow Cycles |
3 |
| Application/Qualification Tier |
COMMERCIAL, INDUSTRIAL |
| Harmonized Tariff (US) Disclaimer |
8541.29.0075 |
| Efficiency (Typ) (%) |
55 |
| Peak Package Body Temperature (PPT)(°C) |
Not Available |
| Device Weight (g) |
6.42500 |
| RoHS Certificate of Analysis (CoA) |
Contact Us |
| Export Control Classification Number (US) |
EAR99 |
| Package Length (nominal) (mm) |
34.040 |
| Package Thickness (nominal) (mm) |
3.760 |
| Part Number |
MRF7S18125BHR5 |
| Halogen Free |
Yes |
| Package Description and Mechanical Drawing |
NI-780 |
| Pin/Lead/Ball Count |
3 |
| Sample Exception Availability |
N |
| Tape & Reel |
Yes |
| Class |
AB |
| P1dB (Typ) (W) |
140 |
| Application |
GSM / GSM EDGE |
| Frequency Band (Min-Max) (MHz) |
1930 to 1990 |
| Matching |
I/O |
| Material Composition Declaration (MCD) |
Download MCD Report Download MCD Report |
| Supply Voltage (Typ) (V) |
28 |
| Maximum Time at Peak Temperature (s) |
40 |
| Micron Size (μm) |
6 |
| Thermal Resistance (Spec) (°CW) |
0.31 |
| Description |
HV7 1.9GHZ CW 125W NI780 |
| Package Width (nominal) (mm) |
9.780 |
| REACH SVHC |
Freescale REACH Statement |
| Test Signal |
1-Tone |
| Frequency (Max) (MHz) |
1990 |
| Status |
No Longer Manufactured |
| 2nd Level Interconnect |
e4 |
| Life Cycle Description (code) |
REMOVED FROM ACTIVE PORTFOLIO |
| Material Type |
Tested Packaged Device |
| Power Gain (Typ) (dB) @ f (MHz) |
16.5 @ 1990 |
| Budgetary Price($US) |
- |
| Output Power (Typ) (W) @ Intermodulation Level at Test Signal |
125 @ CW |