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MRF7S18125BHR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780
无铅情况/ROHS:
无铅
描述:
HV7 1.9GHZ CW 125W NI780

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  • 参数
  • 描述
  • 文档
参数 数值
Status No Longer Manufactured
Export Control Classification Number (US) EAR99
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 125 @ CW
P1dB (Typ) (W) 140
Package Width (nominal) (mm) 9.780
Thermal Resistance (Spec) (°CW) 0.31
Part Number MRF7S18125BHR3
Class AB
POQ Container BOX
Last Order Date 27 Jun 2012
RoHS Certificate of Analysis (CoA) Contact Us
Test Signal 1-Tone
Efficiency (Typ) (%) 55
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Preferred Order Quantity (POQ) 250
Supply Voltage (Typ) (V) 28
Device Weight (g) 6.42500
Life Cycle Description (code) PRODUCT LAST SHIPMENTS
REACH SVHC Freescale REACH Statement
Budgetary Price($US) -
2nd Level Interconnect e4
Device Production Availability 13 Jun 2011
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Harmonized Tariff (US) Disclaimer 8541.29.0075
Material Type Tested Packaged Device
Application GSM / GSM EDGE
Halogen Free Yes
Package Description and Mechanical Drawing NI-780
Package Length (nominal) (mm) 34.040
Package Thickness (nominal) (mm) 3.760
Peak Package Body Temperature (PPT)(°C) 260
Pin/Lead/Ball Count 3
Frequency (Max) (MHz) 1990
Power Gain (Typ) (dB) @ f (MHz) 16.5 @ 1990
Description HV7 1.9GHZ CW 125W NI780
Device Sample Availability 13 Jun 2011
Last Ship Date 27 Jun 2013
Minimum Package Quantity (MPQ) 250
Matching I/O
Maximum Time at Peak Temperature (s) 40
Tape & Reel Yes
Frequency Band (Min-Max) (MHz) 1930 to 1990
Number of Reflow Cycles 3
Die Technology LDMOS
Micron Size (μm) 6
MPQ Container REEL
Sample Exception Availability N

The MRF7S18125BHR3 and MRF7S18125BHSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. View Product Image

Features

  • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 1100 mA, Pout = 125 Watts CW, f = 1930 MHz
    Power Gain = 16.5 dB
    Drain Efficiency = 55%
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 1100 mA, Pout = 57 Watts Avg., Full Frequency Band (1930–1990 MHz).
    Power Gain = 17 dB
    Drain Efficiency = 39%
    Spectral Regrowth @ 400 kHz Offset = –60 dBc
    Spectral Regrowth @ 600 kHz Offset = –74 dBc
    EVM = 2.6% rms
  • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 125 Watts CW Output Power
  • Typical Pout @ 1 dB Compression Point 140 Watts CW
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Data Sheets
文档名称 文档类型 软件 描述
MRF7S18125BHR3PDF下载 点击下载 点击下载 MRF7S18125BH
Application Notes
文档名称 文档类型 软件 描述
MRF7S18125BHR3PDF下载 点击下载 点击下载 AN1955
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF7S18125BHR3PDF下载 点击下载 点击下载 EB212
Packaging Information
文档名称 文档类型 软件 描述
MRF7S18125BHR3PDF下载 点击下载 点击下载 98ASB16718C
MRF7S18125BHR3PDF下载 点击下载 点击下载 98ASB15607C
Selector Guides
文档名称 文档类型 软件 描述
MRF7S18125BHR3PDF下载 点击下载 点击下载 SG46