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MRF7S18125AHSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
HV7 1.8GHZ CW 125W NI780S

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  • 参数
  • 描述
  • 文档
参数 数值
Frequency (Max) (MHz) 1880
Last Ship Date 27 Jun 2013
Last Order Date 27 Jun 2012
Die Technology LDMOS
Application GSM / GSM EDGE
Halogen Free Yes
Package Length (nominal) (mm) 20.570
Package Thickness (nominal) (mm) 3.760
Pin/Lead/Ball Count 3
Sample Exception Availability N
Status End of Life
MPQ Container REEL
REACH SVHC Freescale REACH Statement
Thermal Resistance (Spec) (°CW) 0.31
2nd Level Interconnect e4
Device Production Availability 13 Jun 2011
Material Type Tested Packaged Device
Number of Reflow Cycles 3
Description HV7 1.8GHZ CW 125W NI780S
Budgetary Price($US) -
Minimum Package Quantity (MPQ) 250
Supply Voltage (Typ) (V) 28
Test Signal 1-Tone
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Device Production Availability 15 Jun 2010
Preferred Order Quantity (POQ) 250
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Peak Package Body Temperature (PPT)(°C) 270
Part Number MRF7S18125AHSR3
Device Weight (g) 4.76300
Frequency Band (Min-Max) (MHz) 1805 to 1880
Leadtime (weeks) 8
POQ Container BOX
Class AB
Export Control Classification Number (US) EAR99
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 125 @ CW
P1dB (Typ) (W) 140
RoHS Certificate of Analysis (CoA) Contact Us
Harmonized Tariff (US) Disclaimer 8541.29.0075
Package Description and Mechanical Drawing NI-780S
Package Width (nominal) (mm) 9.780
Efficiency (Typ) (%) 55
Life Cycle Description (code) PROD PHASE OUT/SEE LAST ORD DT
Micron Size (μm) 6
Device Sample Availability 13 Jun 2011
Maximum Time at Peak Temperature (s) 40
Power Gain (Typ) (dB) @ f (MHz) 17 @ 1880
Tape & Reel Yes
Device Sample Availability 15 Jun 2010
Matching I/O

The MRF7S18125AHR3 and MRF7S18125AHSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. View Product Image

Features

  • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 1100 mA, Pout = 125 Watts CW, f = 1880 MHz
    Power Gain = 17 dB
    Drain Efficiency = 55%
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 1100 mA, Pout = 57 Watts Avg., Full Frequency Band (1805–1880 MHz).
    Power Gain = 17 dB
    Drain Efficiency = 38%
    Spectral Regrowth @ 400 kHz Offset = –63 dBc
    Spectral Regrowth @ 600 kHz Offset = –75 dBc
    EVM = 1.75% rms
  • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1840 MHz, 125 Watts CW Output Power
  • Typical Pout @ 1 dB Compression Point 140 Watts CW
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Packaging Information
文档名称 文档类型 软件 描述
MRF7S18125AHSR3PDF下载 点击下载 点击下载 98ASB15607C
MRF7S18125AHSR3PDF下载 点击下载 点击下载 98ASB16718C
Selector Guides
文档名称 文档类型 软件 描述
MRF7S18125AHSR3PDF下载 点击下载 点击下载 SG46
Data Sheets
文档名称 文档类型 软件 描述
MRF7S18125AHSR3PDF下载 点击下载 点击下载 MRF7S18125AH
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF7S18125AHSR3PDF下载 点击下载 点击下载 EB212
Application Notes
文档名称 文档类型 软件 描述
MRF7S18125AHSR3PDF下载 点击下载 点击下载 AN1955