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MRF7S15100HR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780
无铅情况/ROHS:
无铅
描述:
HV7 1.5GHZ 28V 23W NI780

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) EAR99
Frequency (Max) (MHz) 1510
Frequency Band (Min-Max) (MHz) 1470 to 1510
Harmonized Tariff (US) Disclaimer 8541.29.0075
Life Cycle Description (code) PRODUCT STABLE GROWTH/MATURITY
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) 6
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability N
Supply Voltage (Typ) (V) 28
Minimum Package Quantity (MPQ) 250
POQ Container BOX
Matching I/O
P1dB (Typ) (W) 100
Test Signal W-CDMA
Leadtime (weeks) 8
Wideband Efficiency (Typ) (%) 32
Wideband Frequency (Min-Max) (MHz) (f) 1450 to 1900
Halogen Free Yes
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
MPQ Container REEL
Number of Reflow Cycles 3
REACH SVHC Freescale REACH Statement
Description HV7 1.5GHZ 28V 23W NI780
Package Width (nominal) (mm) 9.780
Preferred Order Quantity (POQ) 250
Thermal Resistance (Spec) (°CW) 0.74
Budgetary Price($US) -
Status Active
Tape & Reel Yes
Part Number MRF7S15100HR3
Device Weight (g) 6.42500
Peak Package Body Temperature (PPT)(°C) 260
Package Length (nominal) (mm) 34.040
Package Thickness (nominal) (mm) 3.760
Package Description and Mechanical Drawing NI-780
Efficiency (Typ) (%) 32
Power Gain (Typ) (dB) @ f (MHz) 19.5 @ 1510
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 23 @ AVG
Device Sample Availability 15 Jun 2010
Device Production Availability 15 Jun 2010

The MRF7S15100HR3 and MRF7S15100HSR3 are designed for CDMA base station applications with frequencies from 1470 to 1510 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications. View Product Image

Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 23 Watts Avg., f = 1507.5 MHz, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 19.5 dB
    Drain Efficiency: 32%
    Device Output Signal PAR:  6.2 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –38 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1490 MHz, 100 Watts CW Output Power
  • Typical Pout @ 1 dB Compression Point 100 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Packaging Information
文档名称 文档类型 软件 描述
MRF7S15100HR3PDF下载 点击下载 点击下载 98ASB16718C
MRF7S15100HR3PDF下载 点击下载 点击下载 98ASB15607C
Data Sheets
文档名称 文档类型 软件 描述
MRF7S15100HR3PDF下载 点击下载 点击下载 MRF7S15100H
Selector Guides
文档名称 文档类型 软件 描述
MRF7S15100HR3PDF下载 点击下载 点击下载 SG46
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF7S15100HR3PDF下载 点击下载 点击下载 EB212
Application Notes
文档名称 文档类型 软件 描述
MRF7S15100HR3PDF下载 点击下载 点击下载 AN1955