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MRF6S23100HSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
HV6 2.3GHZ 20W NI780HS

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) 5A991
Frequency (Max) (MHz) 2400
Frequency Band (Min-Max) (MHz) 2300 to 2400
Harmonized Tariff (US) Disclaimer 8541.29.0075
Life Cycle Description (code) PRODUCT LAST SHIPMENTS
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) 6
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability N
Supply Voltage (Typ) (V) 28
Minimum Package Quantity (MPQ) 250
POQ Container REEL
Matching I/O
P1dB (Typ) (W) 100
Test Signal W-CDMA
Last Order Date 27 Jun 2012
Last Ship Date 27 Jun 2013
Halogen Free Yes
Intermodulation Distortion - IM3 (Typ) (dBc) -37
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
MPQ Container REEL
Number of Reflow Cycles 3
REACH SVHC Freescale REACH Statement
Description HV6 2.3GHZ 20W NI780HS
Package Width (nominal) (mm) 9.780
Preferred Order Quantity (POQ) 250
Thermal Resistance (Spec) (°CW) 0.59
Budgetary Price($US) -
Status No Longer Manufactured
Tape & Reel Yes
Part Number MRF6S23100HSR3
Device Weight (g) 4.76300
Peak Package Body Temperature (PPT)(°C) 260
Package Length (nominal) (mm) 20.570
Package Thickness (nominal) (mm) 3.760
Package Description and Mechanical Drawing NI-780S
Efficiency (Typ) (%) 23.5
Power Gain (Typ) (dB) @ f (MHz) 15.4 @ 2390
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 20 @ AVG
Device Sample Availability 21 Jun 2011
Device Production Availability 21 Jun 2011

The MRF6S23100HR3 and MRF6S23100HSR3 are designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications. View Product Image

Features

  • Typical 2-Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 20 Watts Avg., f = 2390 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 15.4 dB
    Drain Efficiency: 23.5%
    IM3 @ 10 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
    ACPR @ 5 MHz Offset: –40.5 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 100 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Packaging Information
文档名称 文档类型 软件 描述
MRF6S23100HSR3PDF下载 点击下载 点击下载 98ASB15607C
MRF6S23100HSR3PDF下载 点击下载 点击下载 98ASB16718C
Data Sheets
文档名称 文档类型 软件 描述
MRF6S23100HSR3PDF下载 点击下载 点击下载 MRF6S23100H
Application Notes
文档名称 文档类型 软件 描述
MRF6S23100HSR3PDF下载 点击下载 点击下载 AN1955
Selector Guides
文档名称 文档类型 软件 描述
MRF6S23100HSR3PDF下载 点击下载 点击下载 SG46