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MRF6S21100HR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780
无铅情况/ROHS:
无铅
描述:
HV6 23W W-CDMA NI780H

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) EAR99
Frequency (Max) (MHz) 2170
Frequency Band (Min-Max) (MHz) 2110 to 2170
Harmonized Tariff (US) Disclaimer 8541.29.0075
Life Cycle Description (code) PRODUCT MATURITY/SATURATION
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) 6
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability Y
Supply Voltage (Typ) (V) 28
Minimum Package Quantity (MPQ) 250
POQ Container REEL
Matching I/O
P1dB (Typ) (W) 100
Test Signal W-CDMA
Leadtime (weeks) 8
Halogen Free Yes
Intermodulation Distortion - IM3 (Typ) (dBc) -37
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
MPQ Container REEL
Number of Reflow Cycles 3
REACH SVHC Freescale REACH Statement
Description HV6 23W W-CDMA NI780H
Package Width (nominal) (mm) 9.780
Preferred Order Quantity (POQ) 250
Thermal Resistance (Spec) (°CW) 0.52
Budgetary Price($US) -
Status Active
Tape & Reel Yes
Part Number MRF6S21100HR3
Device Weight (g) 6.42500
Peak Package Body Temperature (PPT)(°C) 260
Package Length (nominal) (mm) 34.040
Package Thickness (nominal) (mm) 3.760
Package Description and Mechanical Drawing NI-780
Efficiency (Typ) (%) 27.6
Power Gain (Typ) (dB) @ f (MHz) 15.9 @ 2170
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 23 @ AVG
Device Sample Availability 15 Jun 2010
Device Production Availability 15 Jun 2010

The MRF6S21100HR3 and MRF6S21100HSR3 are designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio, WLL and TD–SCDMA applications. View Product Image

Features

  • Typical 2–Carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 950 mA, Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 15.9 dB
    Drain Efficiency: 27.6%
    IM3 @ 10 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
    ACPR @ 5 MHz Offset: –39.5 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Selector Guides
文档名称 文档类型 软件 描述
MRF6S21100HR3PDF下载 点击下载 点击下载 SG46
Data Sheets
文档名称 文档类型 软件 描述
MRF6S21100HR3PDF下载 点击下载 点击下载 MRF6S21100H
Packaging Information
文档名称 文档类型 软件 描述
MRF6S21100HR3PDF下载 点击下载 点击下载 98ASB15607C
MRF6S21100HR3PDF下载 点击下载 点击下载 98ASB16718C
Application Notes
文档名称 文档类型 软件 描述
MRF6S21100HR3PDF下载 点击下载 点击下载 AN1955
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF6S21100HR3PDF下载 点击下载 点击下载 EB212