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MRF6S19200HSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
HV6 1.9GHZ 56W 28V NI780S

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  • 参数
  • 描述
  • 文档
参数 数值
Harmonized Tariff (US) Disclaimer 8541.29.0075
Package Thickness (nominal) (mm) 3.760
POQ Container BOX
Preferred Order Quantity (POQ) 250
Sample Exception Availability N
Last Order Date 01 Jul 2011
Package Description and Mechanical Drawing NI-780S
RoHS Certificate of Analysis (CoA) Contact Us
Status No Longer Manufactured
Device Weight (g) 4.76300
Material Type Tested Packaged Device
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 56 @ AVG
Package Width (nominal) (mm) 9.780
Last Ship Date 30 Jun 2012
Number of Reflow Cycles 3
Package Length (nominal) (mm) 20.570
Peak Package Body Temperature (PPT)(°C) 260
Thermal Resistance (Spec) (°CW) 0.36
Description HV6 1.9GHZ 56W 28V NI780S
Class AB
Life Cycle Description (code) PRODUCT LAST SHIPMENTS
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Export Control Classification Number (US) EAR99
P1dB (Typ) (W) 130
Minimum Package Quantity (MPQ) 250
REACH SVHC Freescale REACH Statement
Budgetary Price($US) -
Frequency (Max) (MHz) 1990
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Supply Voltage (Typ) (V) 28
2nd Level Interconnect e4
Device Sample Availability 15 Jun 2010
Halogen Free Yes
Pin/Lead/Ball Count 3
Efficiency (Typ) (%) 29.5
Matching I/O
Maximum Time at Peak Temperature (s) 40
Tape & Reel Yes
Device Production Availability 15 Jun 2010
Frequency Band (Min-Max) (MHz) 1930 to 1990
Test Signal W-CDMA
Part Number MRF6S19200HSR3
Die Technology LDMOS
Micron Size (μm) 6
MPQ Container REEL
Power Gain (Typ) (dB) @ f (MHz) 17.9 @ 1990

The MRF6S19200HR3 and MRF6S19200HSR3 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN–PCS/cellular radio applications. View Product Image

Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 56 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 17.9 dB
    Drain Efficiency: 29.5%
    Device Output Signal PAR:  5.9 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –36 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW Output Power
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Application Notes
文档名称 文档类型 软件 描述
MRF6S19200HSR3PDF下载 点击下载 点击下载 AN1955
Selector Guides
文档名称 文档类型 软件 描述
MRF6S19200HSR3PDF下载 点击下载 点击下载 SG46
Data Sheets
文档名称 文档类型 软件 描述
MRF6S19200HSR3PDF下载 点击下载 点击下载 MRF6S19200H
Packaging Information
文档名称 文档类型 软件 描述
MRF6S19200HSR3PDF下载 点击下载 点击下载 98ASB15607C
MRF6S19200HSR3PDF下载 点击下载 点击下载 98ASB16718C
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF6S19200HSR3PDF下载 点击下载 点击下载 EB212