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MRF6S19120HR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780
无铅情况/ROHS:
无铅
描述:
HV6 19W N-CDMA NI780H

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) EAR99
Frequency (Max) (MHz) 1990
Frequency Band (Min-Max) (MHz) 1930 to 1990
Harmonized Tariff (US) Disclaimer 8541.29.0075
Life Cycle Description (code) REMOVED FROM ACTIVE PORTFOLIO
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) 6
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability N
Supply Voltage (Typ) (V) 28
Matching I/O
P1dB (Typ) (W) 120
Test Signal N-CDMA
Last Order Date 04 Apr 2009
Last Ship Date 03 Oct 2009
Halogen Free Yes
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
Number of Reflow Cycles 3
REACH SVHC Freescale REACH Statement
Description HV6 19W N-CDMA NI780H
Package Width (nominal) (mm) 9.780
Thermal Resistance (Spec) (°CW) 0.43
Budgetary Price($US) -
Status No Longer Manufactured
Tape & Reel Yes
Part Number MRF6S19120HR3
Device Weight (g) 6.42500
Peak Package Body Temperature (PPT)(°C) Not Available
Package Length (nominal) (mm) 34.040
Package Thickness (nominal) (mm) 3.760
Package Description and Mechanical Drawing NI-780
Efficiency (Typ) (%) 21.5
Power Gain (Typ) (dB) @ f (MHz) 15 @ 1990
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 19 @ AVG
Device Sample Availability 14 Aug 2004
Device Sample Availability 18 Feb 2005
Device Production Availability 14 Aug 2004
Device Production Availability 18 Feb 2005

MRF6S19120HR3, MRF6S19120HSR3 removed from active portfolio. View replacement parts via Orderable Part Number Search.

The MRF6S19120HR3 and MRF6S19120HSR3 are designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. View Product Image

Features

  • Typical Single–Carrier N–CDMA Performance for VDD = 28 Volts, IDQ = 1000 mA, Pout = 19 Watts Avg., f = 1990 MHz, IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
    Power Gain: 15 dB
    Drain Efficiency: 21.5%
    ACPR @ 885 kHz Offset: –54 dBc in 30 kHz Bandwidth
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

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