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MRF6S18100NBR1

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
TO-272 WB-4
无铅情况/ROHS:
无铅
描述:
1990MHZ 28V TO272WB4N

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  • 参数
  • 描述
  • 文档
参数 数值
Minimum Package Quantity (MPQ) 500
Pb-Free No
Peak Package Body Temperature (PPT)(°C) 260
Device Production Availability 15 Jun 2010
Harmonized Tariff (US) Disclaimer 8541.29.0075
Last Order Date 01 Jul 2011
Life Cycle Description (code) PRODUCT LAST SHIPMENTS
Thermal Resistance (Spec) (°CW) 0.51
Device Sample Availability 15 Jun 2010
Matching I/O
Package Thickness (nominal) (mm) 2.590
Power Gain (Typ) (dB) @ f (MHz) 14.5 @ 1930 / 14.5 @ 1990
Frequency (Max) (MHz) 1990
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 100 @ CW
Sample Exception Availability N
Tape & Reel Yes
2nd Level Interconnect e3
Budgetary Price($US) -
Maximum Time at Peak Temperature (s) 40
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Frequency Band (Min-Max) (MHz) 1805 to 1990
Material Type Tested Packaged Device
Micron Size (μm) .37
Moisture Sensitivity Level (MSL) 3
Number of Reflow Cycles 3
MPQ Container REEL
Device Weight (g) 1.91110
Floor Life 168 HOURS
Last Ship Date 30 Jun 2012
Pin/Lead/Ball Count 5
Part Number MRF6S18100NBR1
Die Technology LDMOS
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Supply Voltage (Typ) (V) 28
Test Signal 1-Tone
Status No Longer Manufactured
Mounting Style Surface Mount
Package Length (nominal) (mm) 23.620
Class AB
Device Production Availability 17 Dec 2005
Export Control Classification Number (US) EAR99
RoHS Certificate of Analysis (CoA) Contact Us
Efficiency (Typ) (%) 49
P1dB (Typ) (W) 100
Package Description and Mechanical Drawing TO-272 WB-4
Package Width (nominal) (mm) 9.020
Package Material Plastic
Description 1990MHZ 28V TO272WB4N
Device Sample Availability 17 Dec 2005
REACH SVHC Freescale REACH Statement
RoHS technical exemption(s) 7a
UL94 (plastics flammability test) V0: burning stops within 10 seconds on a vertical specimen; no drips allowed

The MRF6S18100NR1 and MRF6S18100NBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. View Product Image

Features


  • Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 100 Watts, f = 1990 MHz
    Power Gain: 14.5 dB
    Drain Efficiency: 49%

  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,
    Pout = 40 Watts Avg., Full Frequency Band (1805–1880 MHz or 1930–1990 MHz)
    Power Gain: 15 dB
    Drain Efficiency: 35%
    Spectral Regrowth @ 400 kHz Offset = –63 dBc
    Spectral Regrowth @ 600 kHz Offset = –76 dBc
    EVM: 2% rms
  • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
  • 225°C Capable Plastic Package
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Data Sheets
文档名称 文档类型 软件 描述
MRF6S18100NBR1PDF下载 点击下载 点击下载 MRF6S18100N
Packaging Information
文档名称 文档类型 软件 描述
MRF6S18100NBR1PDF下载 点击下载 点击下载 98ASA10575D
MRF6S18100NBR1PDF下载 点击下载 点击下载 98ASA10577D
Selector Guides
文档名称 文档类型 软件 描述
MRF6S18100NBR1PDF下载 点击下载 点击下载 SG46
Application Notes
文档名称 文档类型 软件 描述
MRF6S18100NBR1PDF下载 点击下载 点击下载 AN1955
MRF6S18100NBR1PDF下载 点击下载 点击下载 AN3263
MRF6S18100NBR1PDF下载 点击下载 点击下载 AN3789
MRF6S18100NBR1PDF下载 点击下载 点击下载 AN1907
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF6S18100NBR1PDF下载 点击下载 点击下载 EB212