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MRF5S21130HR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-880
无铅情况/ROHS:
无铅
描述:
HV5 LDMOS WCDMA NI880

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) 5A991
Frequency (Max) (MHz) 2170
Frequency Band (Min-Max) (MHz) 2110 to 2170
Harmonized Tariff (US) Disclaimer 8542.31.0000
Life Cycle Description (code) PRODUCT LAST SHIPMENTS
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) 6
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability N
Supply Voltage (Typ) (V) 28
Minimum Package Quantity (MPQ) 250
Matching I/O
P1dB (Typ) (W) 100
Test Signal W-CDMA
Last Order Date 03 Oct 2008
Last Ship Date 14 May 2009
Halogen Free Yes
Intermodulation Distortion - IM3 (Typ) (dBc) -37
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
MPQ Container REEL
Number of Reflow Cycles 3
REACH SVHC Freescale REACH Statement
Description HV5 LDMOS WCDMA NI880
Package Width (nominal) (mm) .540
Thermal Resistance (Spec) (°CW) 0.44
Budgetary Price($US) -
Status No Longer Manufactured
Tape & Reel Yes
Part Number MRF5S21130HR3
Device Weight (g) 9.73370
Peak Package Body Temperature (PPT)(°C) 260
Package Length (nominal) (mm) 1.340
Package Thickness (nominal) (mm) .200
Package Description and Mechanical Drawing NI-880
Efficiency (Typ) (%) 26
Power Gain (Typ) (dB) @ f (MHz) 13.5 @ 2170
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 28 @ AVG
Device Sample Availability 23 Oct 2003
Device Sample Availability 15 Apr 2006
Device Production Availability 15 Apr 2006
Device Production Availability 23 Oct 2003

MRF5S21130HR3, MRF5S21130HSR3 removed from active portfolio. View replacement parts via Orderable Part Number Search.

The MRF5S21130HR3 and MRF5S21130HSR3 are designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. View Product Image

Features

  • Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 28 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 13.5 dB
    Efficiency: 26%
    IM3 @ 10 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
    ACPR @ 5 MHz Offset: –39 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW Output Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Lower Thermal Resistance Package
  • Low Gold Plating Thickness on Leads, 40µ″ Nominal.
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

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