| Thermal Resistance (Spec) (°CW) |
5.74 |
| Part Number |
MRF281ZR1 |
| Device Production Availability |
29 Dec 2005 |
| Material Type |
Tested Packaged Device |
| Micron Size (μm) |
.6 |
| Supply Voltage (Typ) (V) |
26 |
| Description |
RF PWR FET |
| Halogen Free |
Yes |
| Pin/Lead/Ball Count |
3 |
| RoHS Certificate of Analysis (CoA) |
Contact Us |
| Application/Qualification Tier |
COMMERCIAL, INDUSTRIAL |
| Class |
A / AB |
| Die Technology |
LDMOS |
| Harmonized Tariff (US) Disclaimer |
8541.29.0075 |
| Package Length (nominal) (mm) |
4.700 |
| Budgetary Price($US) |
- |
| Efficiency (Typ) (%) |
33 |
| Frequency Band (Min-Max) (MHz) |
1930 to 2000 |
| Intermodulation Distortion - IMD (Typ) (dBc) |
-31 |
| Last Ship Date |
03 Oct 2009 |
| Material Composition Declaration (MCD) |
Download MCD Report Download MCD Report |
| Status |
No Longer Manufactured |
| Last Order Date |
04 Apr 2009 |
| REACH SVHC |
Freescale REACH Statement |
| Output Power (Typ) (W) @ Intermodulation Level at Test Signal |
4 @ PEP |
| Package Thickness (nominal) (mm) |
2.540 |
| Package Width (nominal) (mm) |
3.680 |
| Tape & Reel |
Yes |
| Frequency (Max) (MHz) |
2000 |
| P1dB (Typ) (W) |
4 |
| Package Description and Mechanical Drawing |
NI-200Z |
| 2nd Level Interconnect |
e4 |
| Life Cycle Description (code) |
REMOVED FROM ACTIVE PORTFOLIO |
| Device Weight (g) |
.13560 |
| Export Control Classification Number (US) |
EAR99 |
| Maximum Time at Peak Temperature (s) |
40 |
| Device Sample Availability |
29 Dec 2005 |
| Power Gain (Typ) (dB) @ f (MHz) |
12.5 @ 2000 |
| Sample Exception Availability |
N |
| Test Signal |
2-Tone |
| Matching |
Unmatched |
| Number of Reflow Cycles |
3 |
| Peak Package Body Temperature (PPT)(°C) |
260 |