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MRF21045LR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-400
无铅情况/ROHS:
无铅
描述:
RF PWR LDMOS NI400L

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) 5A991
Frequency (Max) (MHz) 2170
Frequency Band (Min-Max) (MHz) 2110 to 2170
Harmonized Tariff (US) Disclaimer 8542.31.0000
Life Cycle Description (code) REMOVED FROM ACTIVE PORTFOLIO
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) 6
Pin/Lead/Ball Count 2
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability N
Supply Voltage (Typ) (V) 28
Matching I/O
P1dB (Typ) (W) 45
Test Signal W-CDMA
Last Order Date 01 Jul 2011
Last Ship Date 30 Jun 2012
Halogen Free Yes
Intermodulation Distortion - IM3 (Typ) (dBc) -37.5
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
Number of Reflow Cycles 3
REACH SVHC Freescale REACH Statement
Description RF PWR LDMOS NI400L
Package Width (nominal) (mm) 9.780
Thermal Resistance (Spec) (°CW) 1.65
Budgetary Price($US) -
Status No Longer Manufactured
Tape & Reel Yes
Part Number MRF21045LR3
Device Weight (g) 3.69590
Peak Package Body Temperature (PPT)(°C) 260
Package Length (nominal) (mm) 20.320
Package Thickness (nominal) (mm) 3.660
Package Description and Mechanical Drawing NI-400
Efficiency (Typ) (%) 23.5
Power Gain (Typ) (dB) @ f (MHz) 15 @ 2157.5
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 10 @ AVG
Device Sample Availability 15 Jun 2010
Device Sample Availability 22 Oct 2003
Device Production Availability 22 Oct 2003
Device Production Availability 15 Jun 2010

MRF21045LR3, MRF21045LSR3 Not Recommended for New Design.

The MRF21045LR3 and MRF21045LSR3 are designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. View Product Image

Features

  • Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 500 mA, f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels measured over 3.84 MHz Bandwidth at f1 –5 MHz and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth at f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
    Output Power = 10 Watts Avg.
    Efficiency = 23.5%
    Gain = 15 dB
    IM3 = –37.5 dBc
    ACPR = –41 dBc
  • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Output Power
  • Internally Matched for Ease of Use
  • High Gain, High Efficiency and High Linearity
  • Integrated ESD Protection
  • Designed for Maximum Gain and Insertion Phase Flatness
  • Excellent Thermal Stability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Low Gold Plating Thickness on Leads, 40µ″ Nominal.
  • RoHS Compliant
  • In Tape and Reel. R3 suffix = 250 Units per 32 mm, 13 inch Reel.

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Data Sheets
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MRF21045LR3PDF下载 点击下载 点击下载 MRF21045
Engineering Bulletins
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MRF21045LR3PDF下载 点击下载 点击下载 EB212