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MRF18085ALSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
RF POWER LDMOS NI-780LS

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Die Technology LDMOS
Export Control Classification Number (US) 5A991
Frequency (Max) (MHz) 1880
Frequency Band (Min-Max) (MHz) 1805 to 1880
Harmonized Tariff (US) Disclaimer 8542.31.0000
Life Cycle Description (code) PRODUCT LAST SHIPMENTS
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Micron Size (μm) 6
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability N
Supply Voltage (Typ) (V) 26
Minimum Package Quantity (MPQ) 250
POQ Container REEL
Matching I/O
P1dB (Typ) (W) 83
Test Signal 1-Tone
Last Order Date 01 Jul 2011
Last Ship Date 30 Jun 2012
Halogen Free Yes
Material Type Tested Packaged Device
Maximum Time at Peak Temperature (s) 40
MPQ Container REEL
Number of Reflow Cycles 3
REACH SVHC Freescale REACH Statement
Description RF POWER LDMOS NI-780LS
Package Width (nominal) (mm) 9.780
Preferred Order Quantity (POQ) 250
Thermal Resistance (Spec) (°CW) 0.79
Budgetary Price($US) -
Status No Longer Manufactured
Tape & Reel Yes
Part Number MRF18085ALSR3
Device Weight (g) 4.76300
Peak Package Body Temperature (PPT)(°C) 260
Package Length (nominal) (mm) 20.570
Package Thickness (nominal) (mm) 3.760
Package Description and Mechanical Drawing NI-780S
Efficiency (Typ) (%) 52
Power Gain (Typ) (dB) @ f (MHz) 15 @ 1805 / 15 @ 1880
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 85 @ CW
Device Sample Availability 17 Jun 2010
Device Sample Availability 08 Jan 2003
Device Production Availability 17 Jun 2010
Device Production Availability 08 Jan 2003

MRF18085ALR3 removed from active portfolio. View replacement parts via Part Number Search.

MRF18085ALSR3 Not Recommended for New Design. View replacement parts via Part Number Search.

The MRF18085ALR3 and MRF18085ALSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM–GSM EDGE 1805–1880 MHz. View Product Image

Features

  • GSM and GSM EDGE Performance, Full Frequency Band (1805–1880 MHz)
    Power Gain: 15 dB (Typ) @ 85 Watts CW
    Efficiency: 52% (Typ) @ 85 Watts CW
  • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1840 MHz, 85 Watts CW Output Power
  • Internally Matched for Ease of Use
  • High Gain, High Efficiency and High Linearity
  • Integrated ESD Protection
  • Designed for Maximum Gain and Insertion Phase Flatness
  • Excellent Thermal Stability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

请选择文档类型:
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF18085ALSR3PDF下载 点击下载 点击下载 EB212
Data Sheets
文档名称 文档类型 软件 描述
MRF18085ALSR3PDF下载 点击下载 点击下载 MRF18085A