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RF5325TR7

厂商:
RFMD
类别:
RF前端
包装:
-
封装:
QFN-16
无铅情况/ROHS:
-
描述:
3.3V Smart Energy AMI/ZigBee Fron...

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  • 参数
  • 描述
  • 文档
参数 数值
11b/g/n Gain (dB) 27
11g/n POUT (dBm) 18
11b POUT (dBm) 21
Functionality PA, SP3T, 2 Fo Rejection
Package QFN-16
11g/n EVM (%) 3
Frequency Range (Max) (MHz) 2500
Frequency Range (Min) (MHz) 2400
VSUPPLY (V) 3.3
11b Operating Current (mA) 160
11g/n Operating Current (mA) 130
Switch Type SP3T

The MC33395 combines gate drive, charge pump, current sense, and protection circuitry necessary to drive 3-phase bridge configuration of six N-channel power MOSFETs. Mode logic is incorporated to route a pulse width modulation (PWM )signal to either the low-side FETs or high-side FETS of the bridge, or to provide complementary PWM outputs to both the low and high sides of the bridge. Pulse width modulation frequencies up to 28 kHz are possible. Very few external components are required to implement the 3-phase bridge gate driver: Three tiny capacitors for the charge pump, a current sense resistor, and a few current limit comparator biasing resistors. Built-in protection circuitry prevents damage to the MOS- FET bridge as well as the drive IC, and includes: overvoltage shutdown, over-temperature shutdown, overcurrent shut- down, undervoltage shutdown, reverse battery detect and supply cut-off (via external reverse battery MOSFET).

Features

  • Drives six N-channel low Rds(on)power MOSFETs
  • Built-in charge pump
  • Built-in current sense comparator
  • Built-in pwm mode control logic
  • Built-in circuit protection
  • Designed for fractional to integral hp BLDC motors

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