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SPA-2118Z

厂商：
RFMD
类别：
RF放大器
包装：
Tape & Reel (TR)
封装：
SOIC-8
无铅情况/ROHS：
无铅
描述：
1W GaAs Amplifier

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  • 参数
  • 描述
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参数 数值
测试频率 900MHz
VSUPPLY (V) 5
NF (dB) 5
Package SOIC-8
OIP3 (dBm) 47
类别 RF/IF and RFID
噪声因数 5dB
系列 -
工作电流 360mA ~ 425mA
频率 810MHz ~ 960MHz
增益 31.5dB ~ 34.5dB
P1dB 29dBm (794.3mW)
RF类型 ISM, IS-95, CDMA, AMPS
工作电压 4.75 V ~ 5.25 V
Gain (dB) 33
ISUPPLY (mA) 400
Frequency Range (Max) (MHz) 960
Frequency Range (Min) (MHz) 810
OP1dB (dBm) 29

详细描述
RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band. Its high linearity makes it an ideal choice for multi-carrier and digital applications.
特点
High Linearity Performance
+20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP
+47dBm Typ. OIP3
High Gain: 33dB Typ.
On-Chip Active Bias Control
Patented high Reliability GaAs HBT Technology
Surface-Mountable Plastic Package

请选择文档类型：
文档(Document)
文档名称 文档类型 软件 描述
SPA-2118ZPDF下载 点击下载 点击下载 SPA2118Z Data Sheet
SPA-2118ZPDF下载 点击下载 点击下载 Outline Drawing
SPA-2118ZPDF下载 点击下载 点击下载 Qualification Report
SPA-2118ZPDF下载 点击下载 点击下载 Application Note: Solder Reflow Recommendations Sn/Pb and Pb Free for Plastic RFICs AN038
SPA-2118ZPDF下载 点击下载 点击下载 Application Note: ESD Overview and Suggested Handling Precautions AN037
SPA-2118ZPDF下载 点击下载 点击下载 S-Parameters
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