详细描述
The RFHA1101D is a 28V, 4.3W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RFHA1101D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper heat sinking and assembly. The RFHA1101D is an unmatched 0.5μm gate, GaN transistor die suitable for many applications with >36dBm 3dB-compressed power, >60% 3dB-compressed drain efficiency, and >21dB small signal gain at 2GHz.
特点
Broadband Operation DC to 10GHz
Advanced GaN HEMT Technology
Small Signal Gain=21.4dB at 2.14GHz
28V Typical Performance Output Power 4.3W at P3dB Drain Efficiency 60% at P3dB
Output Power 4.3W at P3dB
Drain Efficiency 60% at P3dB
Dimensions GaN die: 0.448 x 0.825 x 0.1mm GaN die on Heat Sink: 1.25 x 1.25 x 0.3mm
GaN die: 0.448 x 0.825 x 0.1mm
GaN die on Heat Sink: 1.25 x 1.25 x 0.3mm
Active Area Periphery: 2.22mm