详细描述
The RF3376 is a general purpose low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as an easily-cascadable 50 ohm gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000 MHz. The device is self-contained with 50 ohm input and output impedances and requires only two external DC-biasing elements to operate as specified.