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MHVIC2114NR2

厂商：
Freescale
类别：
RF放大器
包装：
Tape & Reel (TR)
封装：
PFP-16
无铅情况/ROHS：
无铅
描述：
2.2GHZ IPA PFP-16N

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  • 参数
  • 描述
  • 文档
参数 数值
P1dB 15W
增益 32dB
频率 2.11GHz ~ 2.17GHz
电源电压 27V
电源电流 95mA
RF类型 Cellular, CDMA2000, W-CDMA, PCS
Part Number MHVIC2114NR2
Device Sample Availability 02 Jul 2005
Pin/Lead/Ball Count 16
Thermal Resistance (Spec) (°CW) 5.52
Description 2.2GHZ IPA PFP-16N
Status No Longer Manufactured
Budgetary Price($US) -
Harmonized Tariff (US) Disclaimer 8542.31.0000
Minimum Package Quantity (MPQ) 1500
Test Signal W-CDMA
Life Cycle Description (code) PRODUCT LAST SHIPMENTS
Material Composition Declaration (MCD) Download MCD Report
Package Material Plastic
Application W-CDMA
2nd Level Interconnect e4
Last Ship Date 30 Jun 2012
Export Control Classification Number (US) 5A991
Floor Life 168 HOURS
RoHS technical exemption(s) 7a
Mounting Style Surface Mount
Package Length (nominal) (mm) 7.000
Package Width (nominal) (mm) 7.000
P1dB (Typ) (W) 14
Last Order Date 01 Jul 2011
Power Gain (Typ) (dB) @ f (MHz) 32 @ 2170
REACH SVHC Freescale REACH Statement
RoHS Certificate of Analysis (CoA) Contact Us
Device Production Availability 15 Jun 2010
Maximum Time at Peak Temperature (s) 40
Tape & Reel Yes
Device Production Availability 02 Jul 2005
Material Type Tested Packaged Device
Device Weight (g) .71455
Die Technology LDMOS
Moisture Sensitivity Level (MSL) 3
MPQ Container REEL
Device Sample Availability 15 Jun 2010
Frequency Band (Min-Max) (MHz) 2110 to 2170
Number of Reflow Cycles 3
Output Power (Typ) (W) (P1dB) 15
Peak Package Body Temperature (PPT)(°C) 260
Sample Exception Availability N
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Package Description and Mechanical Drawing PFP-16
Package Thickness (nominal) (mm) 2.300
Class AB
Frequency (Max) (MHz) 2170
Gain (Typ) (dB) 32
Micron Size (μm) .4
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 15 @ PEP
Pb-Free No
Supply Voltage (Typ) (V) 27

The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses Freescale Semiconductor's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover all modulation formats for cellular applications: CDMA and W–CDMA. The device is in a PFP-16 flat pack package that provides excellent thermal performance through a solderable backside contact. View Product Image

Features


  • Typical Two–Tone Performance: VDD = 27 Volts, IDQ1 = 95 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 15 Watts PEP, Full Frequency Band
    Power Gain:  32 dB
    IMD:  –30 dBc

  • Typical Single–Channel W–CDMA Performance: VDD = 27 Volts, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110–2170 MHz, 3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz Offset, 64 DTCH, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
    Power Gain:  32 dB
    ACPR:  –58 dBc
  • P1dB = 14 Watts, Gain Flatness = 0.2 dB from 2110 to 2170 MHz
  • Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source Scattering Parameters
  • On–Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
  • Integrated Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

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