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RFPD2650

厂商:
RFMD
类别:
RFMD射频IC
包装:
-
封装:
SOT-115J
无铅情况/ROHS:
-
描述:
45MHz to 1003MHz GaAs/GaN Power D...

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  • 参数
  • 描述
  • 文档
参数 数值
Max Current (mA) 450
Max NF (dB) 4.5
Package SOT-115J
Min Power Gain (dB) at FMAX 22.5
Frequency Range (Max) (MHz) 1003
Frequency Range (Min) (MHz) 45

详细描述

The RFPD2650 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has extremely high output capability, and is operated from 45MHz to 1003MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability.

DC current of the device can be externally adjusted for optimum distortion performance
vs. power consumption over a wide range of output level.


特点
Excellent Linearity
Superior Return Loss Performance
Extremely Low Distortion
Optimal Reliability
Low Noise
Unconditionally Stable Under all Terminations
Extremely High Output Capability
22.5dB Min. Gain at 1003MHz
450mA Max. at 24VDC
Extra Pin For Current Adjustment

请选择文档类型:
文档(Document)
文档名称 文档类型 软件 描述
RFPD2650PDF下载 点击下载 点击下载 Brochure: CATV GaN Amplifier Modules
RFPD2650PDF下载 点击下载 点击下载 Brochure: GaAs/GaN Power Doubler Hybrid
RFPD2650PDF下载 点击下载 点击下载 RFPD2650 Data Sheet