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RF5110GTR7

厂商:
RFMD
类别:
RFMD射频IC
包装:
-
封装:
QFN-16
无铅情况/ROHS:
-
描述:
3V GSM/GPRS and General Purpose/I...

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  • 参数
  • 描述
  • 文档
参数 数值
Gain (dB) 32
Package QFN-16
PA Gain (dB) 33
Frequency Range (Max) (MHz) 960
POUT (dBm) 35
Efficiency (%) 57
ISUPPLY (mA) 1000
Frequency Range (Min) (MHz) 150
VSUPPLY (V) 3.6
PA ISUPPLY (mA) 1500
OP1dB (dBm) 35

详细描述

The RF5110G is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held equipment in the 900MHz band, and general purpose radio applications in standard sub-bands from 150MHz to 960MHz. On-board power control provides over 70dB of control range with an analog voltage input, and allows for power down with a logic "low" in standby operation. The device is self-contained with 50? input and the output can be easily matched to obtain optimum power and efficiency characteristics.


特点
Single 2.8V to 3.6V Supply
32dBm Output Power
52% Efficiency
150MHz to 960MHz Operation

请选择文档类型:
文档(Document)
文档名称 文档类型 软件 描述
RF5110GTR7PDF下载 点击下载 点击下载 RF5110G Manufacturing Note
RF5110GTR7PDF下载 点击下载 点击下载 RF5110G Data Sheet