Description
The W958D2B is an A/D MUX (Address Data multiplex) 256M byte CellularRAM? compliant products, organized as 8M by 32 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.
Features
Supports asynchronous, page, and burst operations
VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1.95V VCCQ
Random access time: 70ns
Burst mode READ and WRITE access: 4, 8, or?16 words, or continuous burst
Burst wrap or sequential, Max clock rate: 133 MHz (tCLK = 7.5ns)
Burst initial latency: 39ns (4 clocks) @ 104 MHz, tACLK: 6ns at 133 MHz
Page mode READ access:Sixteen-word page size, Interpage READ access: 70ns, Intrapage READ access: 20ns
Low-power features: TCR, PAR, DPD