The MRF8S9100HR3 and MRF8S9100HSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image
Features
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Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW
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Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
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Typical Pout @ 1 dB Compression Point ≃ 108 Watts CW
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Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 45 Watts Avg.
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Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
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Internally Matched for Ease of Use
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Integrated ESD Protection
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Greater Negative Gate-Source Voltage Range for Improved Class C Operation
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RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.