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SCD1005T-220M-N

厂商:
类别:
功率电感
包装:
2016
封装:
SMD
无铅情况/ROHS:
-
描述:
专业电感电容电阻一站式配套齐可售样品

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The MMZ09312BT1 is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBee® at operating voltages from 3 to 5 Volts. The amplifier is housed in a cost-effective, surface mount QFN plastic package. View Product Image

Features

  • Typical Performance: VCC1 = VCC2 = VBIAS = 5 Volts, ICQ = 74 mA
  • Frequency: 400-1000 MHz
  • P1dB: 29.6 dBm @ 900 MHz
  • Power Gain: 31.7 dB @ 900 MHz
  • OIP3: 42 dBm @ 900 MHz
  • Active Bias Control (adjustable externally)
  • Single 3 to 5 Volt Supply
  • Performs Well with Digital Predistortion Systems
  • Single-ended Power Detector
  • Cost-effective QFN Surface Mount Package
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.

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