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SBY201209T-170Y-N

厂商:
类别:
积层式贴片磁珠
包装:
2015+
封装:
SMD
无铅情况/ROHS:
-
描述:
原装房间公司现货Q1812591727

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The MRF7S19120NR1 is designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 36 Watts Avg., Full Frequency Band, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 18 dB
    Drain Efficiency: 32%
    Device Output Signal PAR: 6.1 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –38.5 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 120 Watts CW Output Power
  • Pout @ 1 dB Compression Point ≥ 120 W CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel

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