The MW7IC18100NR1, MW7IC18100GNR1 and MW7IC18100NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 1805 to 2050 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats including GSM EDGE and CDMA. View Product Image
Features
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Typical GSM Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 1000 mA, Pout = 100 Watts CW, 1805–1880 MHz or 1930–1990 MHz
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Power Gain: 30 dB
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Power Added Efficiency: 48%
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Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 215 mA, IDQ2 = 800 mA, Pout = 40 Watts Avg., 1805–1880 MHz or 1930–1990 MHz
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Power Gain = 31 dB
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Power Added Efficiency: 35%
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Spectral Regrowth @ 400 kHz Offset = –63 dBc
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Spectral Regrowth @ 600 kHz Offset = –80 dBc
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EVM = 1.5%
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Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power
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Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 120 W CW Pout.
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Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source Scattering Parameters
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On-Chip Matching (50 Ohm Input, DC Blocked)
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Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
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Integrated ESD Protection
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225°C Capable Plastic Package
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RoHS Compliant
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In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.