The MRF8S21172HR3 and MRF8S21172HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image
Features
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Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1350 mA, Pout = 42 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
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Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 193 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
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Typical Pout @ 1 dB Compression Point ≃ 132 Watts CW
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100% PAR Tested for Guaranteed Output Power Capability
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Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
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Internally Matched for Ease of Use
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Integrated ESD Protection
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Greater Negative Gate-Source Voltage Range for Improved Class C Operation
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Designed for Digital Predistortion Error Correction Systems
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Optimized for Doherty Applications
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RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.