详细描述
The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25μm x 3000μm Schottky barrier gate defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure is designed for improved linearity over a range of bias conditions and input power levels.
特点
30dBm Output Power (P1dB)
13dB Small-Signal Gain (SSG)
1.3dB Noise Figure
45dBm OIP3
45% Power-Added Efficiency
FPD3000SOT89CE: RoHS Compliant